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Title: Controlling octahedral rotations in a perovskite via strain doping

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep26491· OSTI ID:1255673
 [1];  [1];  [1];  [1];  [2];  [1]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)

The perovskite unit cell is the fundamental building block of many functional materials. The manipulation of this crystal structure is known to be of central importance to controlling many technologically promising phenomena related to superconductivity, multiferroicity, mangetoresistivity, and photovoltaics. The broad range of properties that this structure can exhibit is in part due to the centrally coordinated octahedra bond flexibility, which allows for a multitude of distortions from the ideal highly symmetric structure. However, continuous and fine manipulation of these distortions has never been possible. Here, we show that controlled insertion of He atoms into an epitaxial perovskite film can be used to finely tune the lattice symmetry by modifying the local distortions, i.e., octahedral bonding angle and length. Orthorhombic SrRuO3 films coherently grown on SrTiO3 substrates are used as a model system. Implanted He atoms are confirmed to induce out-of-plane strain, which provides the ability to controllably shift the bulk-like orthorhombically distorted phase to a tetragonal structure by shifting the oxygen octahedra rotation pattern. Lastly, these results demonstrate that He implantation offers an entirely new pathway to strain engineering of perovskite-based complex oxide thin films, useful for creating new functionalities or properties in perovskite materials.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1255673
Journal Information:
Scientific Reports, Vol. 6, Issue 6; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 44 works
Citation information provided by
Web of Science

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  • Livengood, Richard; Tan, Shida; Greenzweig, Yuval
  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 27, Issue 6 https://doi.org/10.1116/1.3237101
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Cited By (15)

Electromagnetic Functionalization of Wide-Bandgap Dielectric Oxides by Boron Interstitial Doping journal August 2018
Designing Magnetic Anisotropy through Strain Doping journal October 2018
Thickness‐Dependent Ru Exchange Spring at La 0.7 Sr 0.3 MnO 3 –SrRuO 3 Interface journal February 2020
Strain effects on oxygen vacancy energetics in KTaO 3 journal January 2017
Highly efficient white-light emission in a polar two-dimensional hybrid perovskite journal January 2018
Isosymmetric structural phase transition of the orthorhombic lanthanum gallate structure as a function of temperature determined by Rietveld analysis journal January 2018
Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale journal June 2017
Single-axis control of manganite films by helium doping via He-co-sputtering journal December 2018
Local structure and defects in ion irradiated KTaO 3 journal March 2018
Low-field switching of noncollinear spin texture at L a 0.7 S r 0.3 Mn O 3 SrRu O 3 interfaces journal January 2019
Optical response of BiFe O 3 films subjected to uniaxial strain journal September 2019
Ferroelectric or non-ferroelectric: why so many materials exhibit ferroelectricity on the nanoscale preprint January 2017
Thickness-Dependent Perovskite Octahedral Distortions at Heterointerfaces journal May 2019
Designing functionality in perovskite thin films using ion implantation techniques: Assessment and insights from first-principles calculations journal September 2017
Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain text January 2019