Buffer layers and articles for electronic devices
Patent
·
OSTI ID:1174955
Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO.sub.3, R.sub.1-x A.sub.x MnO.sub.3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-00OR22725
- Assignee:
- UT-Battelle, LLC (Oak Ridge, TN)
- Patent Number(s):
- 6,764,770
- Application Number:
- 10/324,883
- OSTI ID:
- 1174955
- Country of Publication:
- United States
- Language:
- English
Anomalous Magnetotransport Properties of Pr 1- x Ca x MnO 3
|
journal | October 1995 |
Material characteristics of perovskite manganese oxide thin films for bolometric applications
|
journal | October 1997 |
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