Experimental results of a dual-beam ion source for 200 keV ion implanter
- Department of Nuclear Physics, China Institute of Atomic Energy, Beijing 102413 (China)
A dual beam ion source for 200 keV ion implanter aimed to produce 200 keV H{sub 2}{sup +} and He{sup +} beams simultaneously has been developed. Not suitable to use the analyzing magnet, the purity of beam extracted from the source becomes important to the performance of implanter. The performance of ion source was measured. The results of experiments show that the materials of inlet tube of ion source, the time of arc ionization in ion source, and the amount of gas flow have significant influence on the purity of beam. The measures by using copper as inlet tube material, long time of arc ionization, and increasing the inlet of gas flow could effectively reduce the impurity of beam. And the method using the gas mass flow controller to adjust the proportion of H{sub 2}{sup +} and He{sup +} is feasible.
- OSTI ID:
- 22254176
- Journal Information:
- Review of Scientific Instruments, Vol. 85, Issue 2; Conference: ICIS 2011: 14. international conference on ion sources, Giardini-Naxos, Sicily (Italy), 12-16 Sep 2011; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0034-6748
- Country of Publication:
- United States
- Language:
- English
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