Chemical implantation, isotopic trapping effects, and induced hygroscopicity resulting from 15 keV ion bombardment of sapphire
Targets of single crystal sapphire (..cap alpha..-Al/sub 2/O/sub 3/) have been bombarded with 15 keV H/sup +/, D/sup +/, He/sup +/, Ne/sup +/, and Ar/sup +/. The H/sup +/ and D/sup +/ chemically implant, as indicated by the production of ir absorption bands at 3400 and 2450 cm/sup -1/, attributed to the hydroxyl and deuteroxyl stretching frequencies, respectively. At ion fluences of 1 x 10/sup 17/ cm/sup -2/ the chemical trapping efficiency of D/sup +/ as calculated from the integrated deuteroxyl band intensity is of the order of unity. The number of D/sup +/ chemically trapped as deuteroxyl saturates at about 2 x 10/sup 17/ cm/sup -2/ of target surface area, and at higher D/sup +/ fluences physical trapping of deuterium in gas blisters becomes the dominant trapping mechanism. By contrast, chemical trapping of H/sup +/ saturates at about 7 x 10/sup 16/ cm/sup -2/. This isotopic effect can be rationalized in terms of the greater displacement damage resulting from D/sup +/ bombardment. The surfaces of sapphire targets subjected to 15 keV H/sup +/, D/sup +/, and He/sup +/ bombardments at fluences above 2 x 10/sup 17/ cm/sup -2/ exhibit an induced hygroscopicity characterized by a growing hydroxyl band absorption on exposure to water vapor. Blisters indicative of physical trapping are observed for H/sup +/ and He/sup +/ as well as for high fluence D/sup +/ bombardments. There is no evidence of blistering or induced hygroscopicity due to Ne/sup +/ or Ar/sup +/ bombardments. The results for H/sup +/ and D/sup +/ are extrapolated to T/sup +/ and the implications for chemical sputtering are considered. (AIP)
- Research Organization:
- Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439
- OSTI ID:
- 7280108
- Journal Information:
- J. Chem. Phys.; (United States), Vol. 65:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
PHYSICAL RADIATION EFFECTS
ION IMPLANTATION
TRAPPING
SAPPHIRE
ION BEAMS
ARGON IONS
DEUTERON BEAMS
HELIUM IONS
KEV RANGE 10-100
NEON IONS
PROTON BEAMS
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
BEAMS
CHALCOGENIDES
CHARGED PARTICLES
CORUNDUM
ENERGY RANGE
IONS
KEV RANGE
MINERALS
NUCLEON BEAMS
OXIDES
OXYGEN COMPOUNDS
PARTICLE BEAMS
RADIATION EFFECTS
360206* - Ceramics
Cermets
& Refractories- Radiation Effects