Enhanced conduction in CdSe nanowires on 200 keV phosphorous negative ion implantation
- Department of Physics, National Institute of Technology, Kurukshetra, 136119 (India)
Highlights: • CdSe nanowires were prepared by template assisted electro-deposition. • CdSe nanowires were implanted with 200 keV P{sup −} ions at different fluence. • Structure of CdSe NWs remained intact on ion implantation. • Optical band gap of CdSe NWs decreased after implantation. • The electrical conduction improved due to dominance of ionization effects. - Abstract: For II–VI compound semiconductor nanostructures, ion implantation is considered to be an area of significant interest due to its potential use in the fabrication of the extensive variety of novel optoelectric devices. CdSe nanowires with diameter 80 nm have been grown via the template-assisted electro-deposition method and were subsequently implanted with 200 keV negative phosphorous ions at fluence ranging from 10{sup 11} ions/cm{sup 2} to 10{sup 13} ions/cm{sup 2}. SRIM-TRIM simulation studies are done to understand the course and nature of events occurring during implantation. Pre- and post-implanted samples were characterized by Scanning electron microscope (SEM), X-Ray diffraction (XRD), UV–vis spectroscopy and Probe station with a Keithley source meter. Structural studies reveal no modification in crystal structure upon implantation. An increase of phosphorous content led to an apparent red shift in the optical band gap and an improvement in conductivity. These modifications are attributed to the ionization and the creation of damage on implantation.
- OSTI ID:
- 22805366
- Journal Information:
- Materials Research Bulletin, Vol. 108; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
Similar Records
Effect of 200 keV Ar{sup +} implantation on optical and electrical properties of polyethyleneterepthalate (PET)
Order-of-magnitude differences in retention of low-energy Ar implanted in Si and SiO{sub 2}