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Title: Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures

Abstract

High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/√Hz range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/√Hz and 400 μe/√Hz, respectively. For the single-shot readout performed, less than 10 its is required for both circuits to achieve bit error rates below 10-3, which is a putative threshold for quantum error correction.

Authors:
ORCiD logo [1];  [2];  [2];  [2]; ORCiD logo [2];  [3]; ORCiD logo [3];  [2]; ORCiD logo [2];  [2];  [2];  [2];  [2];  [4];  [2]
+ Show Author Affiliations
  1. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. de Sherbrooke, QC (Canada)
  4. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Center for Integrated Nanotechnologies, Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1574799
Report Number(s):
SAND-2019-7405J
Journal ID: ISSN 2045-2322; 676926
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Scientific Reports
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2045-2322
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS

Citation Formats

Curry, M. J., Rudolph, M., England, T. D., Mounce, A. M., Jock, R. M., Bureau-Oxton, C., Harvey-Collard, P., Sharma, P. A., Jock, R. M., Campbell, D. M., Wendt, J. R., Ward, D. R., Carr, S. M., Lilly, M. P., and Carroll, M. S. Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures. United States: N. p., 2019. Web. doi:10.1038/s41598-019-52868-1.
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Curry, M. J., Rudolph, M., England, T. D., Mounce, A. M., Jock, R. M., Bureau-Oxton, C., Harvey-Collard, P., Sharma, P. A., Jock, R. M., Campbell, D. M., Wendt, J. R., Ward, D. R., Carr, S. M., Lilly, M. P., & Carroll, M. S. Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures. United States. https://doi.org/10.1038/s41598-019-52868-1
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Curry, M. J., Rudolph, M., England, T. D., Mounce, A. M., Jock, R. M., Bureau-Oxton, C., Harvey-Collard, P., Sharma, P. A., Jock, R. M., Campbell, D. M., Wendt, J. R., Ward, D. R., Carr, S. M., Lilly, M. P., and Carroll, M. S. Mon . "Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures". United States. https://doi.org/10.1038/s41598-019-52868-1. https://www.osti.gov/servlets/purl/1574799.
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@article{osti_1574799,
title = {Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures},
author = {Curry, M. J. and Rudolph, M. and England, T. D. and Mounce, A. M. and Jock, R. M. and Bureau-Oxton, C. and Harvey-Collard, P. and Sharma, P. A. and Jock, R. M. and Campbell, D. M. and Wendt, J. R. and Ward, D. R. and Carr, S. M. and Lilly, M. P. and Carroll, M. S.},
abstractNote = {High-fidelity single-shot readout of spin qubits requires distinguishing states much faster than the T1 time of the spin state. One approach to improving readout fidelity and bandwidth (BW) is cryogenic amplification, where the signal from the qubit is amplified before noise sources are introduced and room-temperature amplifiers can operate at lower gain and higher BW. We compare the performance of two cryogenic amplification circuits: a current-biased heterojunction bipolar transistor circuit (CB-HBT), and an AC-coupled HBT circuit (AC-HBT). Both circuits are mounted on the mixing-chamber stage of a dilution refrigerator and are connected to silicon metal oxide semiconductor (Si-MOS) quantum dot devices on a printed circuit board (PCB). The power dissipated by the CB-HBT ranges from 0.1 to 1 μW whereas the power of the AC-HBT ranges from 1 to 20 μW. Referred to the input, the noise spectral density is low for both circuits, in the 15 to 30 fA/√Hz range. The charge sensitivity for the CB-HBT and AC-HBT is 330 μe/√Hz and 400 μe/√Hz, respectively. For the single-shot readout performed, less than 10 its is required for both circuits to achieve bit error rates below 10-3, which is a putative threshold for quantum error correction.},
doi = {10.1038/s41598-019-52868-1},
journal = {Scientific Reports},
number = 1,
volume = 9,
place = {United States},
year = {Mon Nov 18 00:00:00 EST 2019},
month = {Mon Nov 18 00:00:00 EST 2019}
}
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https://doi.org/10.1038/s41598-019-52868-1
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Charge sensing in a Si/SiGe quantum dot with a radio frequency superconducting single-electron transistor
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Radio-frequency dispersive detection of donor atoms in a field-effect transistor
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Single shot spin readout using a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures
journal, February 2016

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  • Applied Physics Letters, Vol. 108, Issue 6
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Vibration-induced electrical noise in a cryogen-free dilution refrigerator: Characterization, mitigation, and impact on qubit coherence
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Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
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Single-shot readout of an electron spin in silicon
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Suppressing qubit dephasing using real-time Hamiltonian estimation
text, January 2014

A fault-tolerant addressable spin qubit in a natural silicon quantum dot
text, January 2016

Quantum dots with split enhancement gate tunnel barrier control
text, January 2017

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