Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

Tracy, Lisa A.; Luhman, Dwight R.; Carr, Stephen M.; Bishop, Nathaniel C.; Ten Eyck, Gregory A.; Pluym, Tammy; Wendt, Joel R.; Lilly, Michael P.; Carroll, Malcolm S.

doi:10.1063/1.4941421

Title: Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

Abstract

We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 10³ the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched ²⁸Si with 96% visibility.

Authors:

Tracy, Lisa A. ^[1]; Luhman, Dwight R. ^[1]; Carr, Stephen M. ^[1]; Bishop, Nathaniel C. ^[1]; Ten Eyck, Gregory A. ^[1]; Pluym, Tammy ^[1]; Wendt, Joel R. ^[1]; Lilly, Michael P. ^[1]; Carroll, Malcolm S. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: Mon Feb 08 00:00:00 EST 2016

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1238671

Report Number(s):: SAND-2015-10479J
Journal ID: ISSN 0003-6951; APPLAB; 614665; TRN: US1600398

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 108; Journal Issue: 6; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 74 ATOMIC AND MOLECULAR PHYSICS; amplifiers; MODFETs; qubits; 1/f noise; visibility

Citation Formats


                    Tracy, Lisa A., Luhman, Dwight R., Carr, Stephen M., Bishop, Nathaniel C., Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Lilly, Michael P., and Carroll, Malcolm S. Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures.  United States: N. p., 2016. 
Web.  doi:10.1063/1.4941421.

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                    Tracy, Lisa A., Luhman, Dwight R., Carr, Stephen M., Bishop, Nathaniel C., Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Lilly, Michael P., & Carroll, Malcolm S. Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures.  United States.  https://doi.org/10.1063/1.4941421

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                    Tracy, Lisa A., Luhman, Dwight R., Carr, Stephen M., Bishop, Nathaniel C., Ten Eyck, Gregory A., Pluym, Tammy, Wendt, Joel R., Lilly, Michael P., and Carroll, Malcolm S. Mon .  
"Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures".  United States.  https://doi.org/10.1063/1.4941421.  https://www.osti.gov/servlets/purl/1238671.

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@article{osti_1238671,

  title        = {Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures},

  author       = {Tracy, Lisa A. and Luhman, Dwight R. and Carr, Stephen M. and Bishop, Nathaniel C. and Ten Eyck, Gregory A. and Pluym, Tammy and Wendt, Joel R. and Lilly, Michael P. and Carroll, Malcolm S.},

  abstractNote = {We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a single electron transistor, allowing for demonstration of single shot readout of an electron spin on a single P donor in Si with 100 kHz bandwidth and a signal to noise ratio of ~9. In order to reduce the impact of cable capacitance, the amplifier is located adjacent to the Si sample, at the mixing chamber stage of a dilution refrigerator. For a current gain of ~2.7 x 103 the power dissipation of the amplifier is 13 μW, the bandwidth is ~1.3 MHz, and for frequencies above 300 kHz the current noise referred to input is ≤ 70 fA/√Hz. Furthermore, with this amplification scheme, we are able to observe coherent oscillations of a P donor electron spin in isotopically enriched 28Si with 96% visibility.},

  doi          = {10.1063/1.4941421},

  journal      = {Applied Physics Letters},

  number       = 6,

  volume       = 108,

  place        = {United States},

  year         = {Mon Feb 08 00:00:00 EST 2016},

  month        = {Mon Feb 08 00:00:00 EST 2016}

}

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Title: Single shot spin readout with a cryogenic high-electron-mobility transistor amplifier at sub-Kelvin temperatures

Abstract

Citation Formats

Quantum computation with quantum dots journal, January 1998

A silicon-based nuclear spin quantum computer journal, May 1998

Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots journal, September 2005

Global control and fast solid-state donor electron spin quantum computing journal, July 2005

Silicon quantum electronics journal, July 2013

Single-shot read-out of an individual electron spin in a quantum dot journal, July 2004

Single-shot readout of an electron spin in silicon journal, September 2010

Cryogenic amplifier for fast real-time detection of single-electron tunneling journal, September 2007

The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer journal, May 1998

Fast single-charge sensing with a rf quantum point contact journal, October 2007

Fast Charge Sensing of a Cavity-Coupled Double Quantum Dot Using a Josephson Parametric Amplifier journal, July 2015

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor journal, May 2015

Nanoscale broadband transmission lines for spin qubit control journal, December 2012

A single-atom electron spin qubit in silicon journal, September 2012

Electron spin lifetime of a single antimony donor in silicon journal, September 2013

Effect of environmental noise on the accuracy of Coulomb-blockade devices journal, December 1993

Miniature electrical filters for single electron devices journal, March 1995

Storing quantum information for 30 seconds in a nanoelectronic device journal, October 2014

Coherent coupling between a quantum dot and a donor in silicon journal, October 2017

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures journal, November 2019

SQUID-based current sensing noise thermometry for quantum resistors at dilution refrigerator temperatures journal, March 2017

Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification journal, April 2019

A compact, ultra-high vacuum ion source for isotopically enriching and depositing 28 Si thin films journal, August 2019

Use of quantum effects as potential qualifying metrics for “quantum grade silicon” journal, December 2019

Benchmarking high fidelity single-shot readout of semiconductor qubits journal, June 2019

Control electronics for semiconductor spin qubits journal, December 2019

Semiconductor quantum computation journal, December 2018

Measurements of Capacitive Coupling Within a Quadruple-Quantum-Dot Array journal, December 2019

Strain-Induced Spin-Resonance Shifts in Silicon Devices journal, April 2018

Turing-complete mechanical processor via automated nonlinear system design journal, October 2019

High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism journal, May 2018

Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit journal, October 2019

Control electronics for semiconductor spin qubits text, January 2020

Coherent coupling between a quantum dot and a donor in silicon text, January 2015

Strain-induced spin resonance shifts in silicon devices text, January 2016

Coherent coupling between a quantum dot and a donor in silicon journal, October 2017

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures journal, November 2019

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures journal, January 2018

Quantum computation with quantum dots
journal, January 1998

A silicon-based nuclear spin quantum computer
journal, May 1998

Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots
journal, September 2005

Global control and fast solid-state donor electron spin quantum computing
journal, July 2005

Silicon quantum electronics
journal, July 2013

Single-shot read-out of an individual electron spin in a quantum dot
journal, July 2004

Single-shot readout of an electron spin in silicon
journal, September 2010

Cryogenic amplifier for fast real-time detection of single-electron tunneling
journal, September 2007

The Radio-Frequency Single-Electron Transistor (RF-SET): A Fast and Ultrasensitive Electrometer
journal, May 1998

Fast single-charge sensing with a rf quantum point contact
journal, October 2007

Fast Charge Sensing of a Cavity-Coupled Double Quantum Dot Using a Josephson Parametric Amplifier
journal, July 2015

Cryogenic preamplification of a single-electron-transistor using a silicon-germanium heterojunction-bipolar-transistor
journal, May 2015

Nanoscale broadband transmission lines for spin qubit control
journal, December 2012

A single-atom electron spin qubit in silicon
journal, September 2012

Electron spin lifetime of a single antimony donor in silicon
journal, September 2013

Effect of environmental noise on the accuracy of Coulomb-blockade devices
journal, December 1993

Miniature electrical filters for single electron devices
journal, March 1995

Storing quantum information for 30 seconds in a nanoelectronic device
journal, October 2014

Coherent coupling between a quantum dot and a donor in silicon
journal, October 2017

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
journal, November 2019

SQUID-based current sensing noise thermometry for quantum resistors at dilution refrigerator temperatures
journal, March 2017

Increasing the signal-to-noise ratio of magnetic tunnel junctions by cryogenic preamplification
journal, April 2019

A compact, ultra-high vacuum ion source for isotopically enriching and depositing ²⁸ Si thin films
journal, August 2019

Use of quantum effects as potential qualifying metrics for “quantum grade silicon”
journal, December 2019

Benchmarking high fidelity single-shot readout of semiconductor qubits
journal, June 2019

Control electronics for semiconductor spin qubits
journal, December 2019

Semiconductor quantum computation
journal, December 2018

Measurements of Capacitive Coupling Within a Quadruple-Quantum-Dot Array
journal, December 2019

Strain-Induced Spin-Resonance Shifts in Silicon Devices
journal, April 2018

Turing-complete mechanical processor via automated nonlinear system design
journal, October 2019

High-Fidelity Single-Shot Readout for a Spin Qubit via an Enhanced Latching Mechanism
journal, May 2018

Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit
journal, October 2019

Control electronics for semiconductor spin qubits
text, January 2020

Coherent coupling between a quantum dot and a donor in silicon
text, January 2015

Strain-induced spin resonance shifts in silicon devices
text, January 2016

Coherent coupling between a quantum dot and a donor in silicon
journal, October 2017

Single-Shot Readout Performance of Two Heterojunction-Bipolar-Transistor Amplification Circuits at Millikelvin Temperatures
journal, November 2019

Characterization and Compact Modeling of Nanometer CMOS Transistors at Deep-Cryogenic Temperatures
journal, January 2018