Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films
Abstract
A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.
- Inventors:
-
- Conifer, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 872319
- Patent Number(s):
- 5909632
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- separate; znte; interface; layers; form; ohmic; contacts; p-cdte; films; method; improving; electrical; contact; film; p-type; tellurium-containing; ii-vi; semiconductor; comprising; depositing; undoped; layer; tellurium; containing; material; properties; selected; limit; formation; potential; barriers; thickness; sufficient; control; diffusion; metallic-doped; tellurim-containing; minimize; affects; series; resistance; heavy; doped; appropriate; dopant; metal; outer-most; surface; connecting; external; conductor; series resistance; doped p-type; thickness sufficient; electrical contact; material properties; ohmic contact; electrical conductor; doped layer; ii-vi semiconductor; ohmic contacts; appropriate metal; interface layer; semiconductor comprising; p-type tellurium-containing; p-cdte films; external electrical; tellurium-containing ii-vi; undoped layer; interface layers; external electric; p-type tellurium; /438/136/
Citation Formats
Gessert, Timothy A. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films. United States: N. p., 1999.
Web.
Gessert, Timothy A. Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films. United States.
Gessert, Timothy A. Fri .
"Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films". United States. https://www.osti.gov/servlets/purl/872319.
@article{osti_872319,
title = {Use of separate ZnTe interface layers to form OHMIC contacts to p-CdTe films},
author = {Gessert, Timothy A},
abstractNote = {A method of improving electrical contact to a thin film of a p-type tellurium-containing II-VI semiconductor comprising: depositing a first undoped layer of ZnTe on a thin film of p-type tellurium containing II-VI semiconductor with material properties selected to limit the formation of potential barriers at the interface between the p-CdTe and the undoped layer, to a thickness sufficient to control diffusion of the metallic-doped ZnTe into the p-type tellurim-containing II-VI semiconductor, but thin enough to minimize affects of series resistance; depositing a second heavy doped p-type ZnTe layer to the first layer using an appropriate dopant; and depositing an appropriate metal onto the outer-most surface of the doped ZnTe layer for connecting an external electrical conductor to an ohmic contact.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}
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Works referenced in this record:
Electrochemical deposition of thin ZnTe films as a contact for CdTe solar cells
journal, April 1992
- Mondal, Anup; McCandless, Brian E.; Birkmire, Robert W.
- Solar Energy Materials and Solar Cells, Vol. 26, Issue 3
Ohmic contacts and doping of CdTe
journal, June 1987
- Fahrenbruch, Alan L.
- Solar Cells, Vol. 21, Issue 1-4