Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer

Youtsey, Christopher; McCarthy, Robert Fabian; Reddy, Rekha

Title: Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer

Patent · Tue Dec 31 00:00:00 EST 2019

OSTI ID:1600452

Youtsey, Christopher; McCarthy, Robert Fabian; Reddy, Rekha

Methods and systems for forming a device structure free of a substrate are described. Exemplary embodiments include a device structure comprising of device layers, a release layer, an etch stop layer, and a substrate. The device structure is exposed to photoenhanced wet etch environments to vertically and laterally etch the release layer to separate the device layers from the substrate. The device structure can include a contact layer, an etch stop layer, or both in some embodiments.

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Research Organization:: MicroLink Devices, Inc., Niles, IL (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AR0000446

Assignee:: MicroLink Devices, Inc. (Niles, IL)

Patent Number(s):: 10,522,363

Application Number:: 16/044,479

OSTI ID:: 1600452

Resource Relation:: Patent File Date: 07/24/2018

Country of Publication:: United States

Language:: English

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Title: Systems and methods for perforation and ohmic contact formation for GaN epitaxial lift-off using an etch stop layer

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