Silicon metal-semiconductor-metal photodetector
Abstract
Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 871252
- Patent Number(s):
- 5691563
- Assignee:
- Sandia National Laboratories (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-76
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- silicon; metal-semiconductor-metal; photodetector; msm; photodiodes; sensitive; radiation; visible; near; infrared; spectral; range; produced; altering; absorption; characteristics; crystalline; implantation; produces; defected; region; below; surface; concentration; defects; base; reduce; contribution; charge; carriers; formed; layer; generated; upper; regions; quickly; collected; biased; schottky; barrier; electrodes; form; structure; photodiode; upper regions; absorption characteristics; charge carrier; spectral range; near infrared; charge carriers; schottky barrier; upper region; silicon metal; region below; carriers formed; carriers generated; metal structure; infrared spectral; silicon msm; silicon metal-semiconductor-metal; metal-semiconductor-metal photodetector; msm photodiodes; formed below; photodiodes sensitive; /257/
Citation Formats
Brueck, Steven R. J., Myers, David R, and Sharma, Ashwani K. Silicon metal-semiconductor-metal photodetector. United States: N. p., 1997.
Web.
Brueck, Steven R. J., Myers, David R, & Sharma, Ashwani K. Silicon metal-semiconductor-metal photodetector. United States.
Brueck, Steven R. J., Myers, David R, and Sharma, Ashwani K. Wed .
"Silicon metal-semiconductor-metal photodetector". United States. https://www.osti.gov/servlets/purl/871252.
@article{osti_871252,
title = {Silicon metal-semiconductor-metal photodetector},
author = {Brueck, Steven R. J. and Myers, David R and Sharma, Ashwani K},
abstractNote = {Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1997},
month = {Wed Jan 01 00:00:00 EST 1997}
}
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Works referenced in this record:
A simple high-speed Si Schottky photodiode
journal, April 1991
- Mullins, B. W.; Soares, S. F.; McArdle, K. A.
- IEEE Photonics Technology Letters, Vol. 3, Issue 4