2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction
Abstract
A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IxH1-x)3, where A is a cation, preferably methylammonium (CH3NH3), formamidinium ([R2N—CH═NR2]+), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.
- Inventors:
- Issue Date:
- Research Org.:
- Stanford Univ., CA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1632443
- Patent Number(s):
- 10535791
- Application Number:
- 14/958,587
- Assignee:
- The Board of Trustees of the Leland Stanford Junior University (Stanford, CA); Massachusetts Institute of Technology (Cambridge, MA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- EE0004946; EE0006707
- Resource Type:
- Patent
- Resource Relation:
- Patent File Date: 12/03/2015
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 14 SOLAR ENERGY
Citation Formats
Mailoa, Jonathan P., Bailie, Colin David, Johlin, Eric Carl, McGehee, Michael David, and Buonassisi, Tonio. 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction. United States: N. p., 2020.
Web.
Mailoa, Jonathan P., Bailie, Colin David, Johlin, Eric Carl, McGehee, Michael David, & Buonassisi, Tonio. 2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction. United States.
Mailoa, Jonathan P., Bailie, Colin David, Johlin, Eric Carl, McGehee, Michael David, and Buonassisi, Tonio. Tue .
"2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction". United States. https://www.osti.gov/servlets/purl/1632443.
@article{osti_1632443,
title = {2-terminal metal halide semiconductor/C-silicon multijunction solar cell with tunnel junction},
author = {Mailoa, Jonathan P. and Bailie, Colin David and Johlin, Eric Carl and McGehee, Michael David and Buonassisi, Tonio},
abstractNote = {A 2-terminal multi-junction solar cell having a thin film of metal halide semiconductor as the top solar-cell material and crystalline silicon as the bottom solar-cell material. In the illustrative embodiment, the top solar-cell material is a perovskite of the form AM(IxH1-x)3, where A is a cation, preferably methylammonium (CH3NH3), formamidinium ([R2N—CH═NR2]+), or cesium; M is metal, preferably Pb, Sn, Ge; H is a halide, preferably Br or Cl; and x=iodine fraction, in the range of 0 to 1, inclusive. The integration of the two solar-cell materials is enabled by the use of a tunnel junction composed of indirect band-gap material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 14 00:00:00 EST 2020},
month = {Tue Jan 14 00:00:00 EST 2020}
}
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