Fabrication of polycrystalline thin films by pulsed laser processing
Abstract
A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.
- Inventors:
-
- Livermore, CA
- San Rafael, CA
- Pleasanton, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 871351
- Patent Number(s):
- 5714404
- Application Number:
- 08/154347
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- fabrication; polycrystalline; films; pulsed; laser; processing; method; fabricating; low-temperature; high-temperature; substrates; temperatures; avoid; damage; substrate; transiently; heating; select; layers; pulse; homogenized; beam; source; length; selected; heated; temperature; allows; recrystallization; dopant; activation; maintaining; sufficiently; particularly; applicable; solar; cells; avoid damage; pulse length; particularly applicable; solar cell; solar cells; pulsed laser; beam source; processing temperatures; laser processing; processing temperature; fabricating polycrystalline; /438/
Citation Formats
Mitlitsky, Fred, Truher, Joel B, Kaschmitter, James L, and Colella, Nicholas J. Fabrication of polycrystalline thin films by pulsed laser processing. United States: N. p., 1998.
Web.
Mitlitsky, Fred, Truher, Joel B, Kaschmitter, James L, & Colella, Nicholas J. Fabrication of polycrystalline thin films by pulsed laser processing. United States.
Mitlitsky, Fred, Truher, Joel B, Kaschmitter, James L, and Colella, Nicholas J. Tue .
"Fabrication of polycrystalline thin films by pulsed laser processing". United States. https://www.osti.gov/servlets/purl/871351.
@article{osti_871351,
title = {Fabrication of polycrystalline thin films by pulsed laser processing},
author = {Mitlitsky, Fred and Truher, Joel B and Kaschmitter, James L and Colella, Nicholas J},
abstractNote = {A method for fabricating polycrystalline thin films on low-temperature (or high-temperature) substrates which uses processing temperatures that are low enough to avoid damage to the substrate, and then transiently heating select layers of the thin films with at least one pulse of a laser or other homogenized beam source. The pulse length is selected so that the layers of interest are transiently heated to a temperature which allows recrystallization and/or dopant activation while maintaining the substrate at a temperature which is sufficiently low to avoid damage to the substrate. This method is particularly applicable in the fabrication of solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Feb 03 00:00:00 EST 1998},
month = {Tue Feb 03 00:00:00 EST 1998}
}
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Works referenced in this record:
Laser-assisted deposition of thin films from gas-phase and surface-adsorbed molecules
journal, September 1989
- Herman, Irving P.
- Chemical Reviews, Vol. 89, Issue 6