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Title: Process for fabricating polycrystalline semiconductor thin-film solar cells, and cells produced thereby

Patent ·
OSTI ID:873335

A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:
AC36-98GO10337
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 6137048
OSTI ID:
873335
Country of Publication:
United States
Language:
English

References (2)

CdS/CdTe thin-film devices using a Cd[sub 2]SnO[sub 4] transparent conducting oxide
  • Wu, X.; Sheldon, P.; Coutts, T. J.
  • National renewable energy laboratory and sandia national laboratories photovoltaics program review meeting, AIP Conference Proceedings https://doi.org/10.1063/1.52871
conference January 1997
CdS/CdTe thin-film solar cell with a zinc stannate buffer layer
  • Wu, X.; Sheldon, P.; Mahathongdy, Y.
  • National center for photovoltaics (NCPV) 15th program review meeting, AIP Conference Proceedings https://doi.org/10.1063/1.57910
conference January 1999

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