Process for selectively patterning epitaxial film growth on a semiconductor substrate
Abstract
A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.
- Inventors:
-
- Golden, CO
- Boulder, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 865997
- Patent Number(s):
- 4614564
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- DOE Contract Number:
- AC02-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- process; selectively; patterning; epitaxial; film; growth; semiconductor; substrate; disclosed; forming; masking; surface; layers; including; layer; disposed; covering; window; selected; portion; removing; expose; thereunder; subjected; etchant; introduced; dissolve; sufficient; amount; directly; beneath; adapted; preferentially; substantially; rate; create; overhanging; ledge; undercutting; edges; adjacent; deposited; exposed; finally; remainder; lift-off; materials; thereon; balance; layer disposed; sufficient amount; film growth; semiconductor substrate; substrate surface; deposited thereon; edge portion; selected portion; epitaxial film; layers including; selectively patterning; patterning epitaxial; exposed substrate; /438/117/257/
Citation Formats
Sheldon, Peter, and Hayes, Russell E. Process for selectively patterning epitaxial film growth on a semiconductor substrate. United States: N. p., 1986.
Web.
Sheldon, Peter, & Hayes, Russell E. Process for selectively patterning epitaxial film growth on a semiconductor substrate. United States.
Sheldon, Peter, and Hayes, Russell E. Wed .
"Process for selectively patterning epitaxial film growth on a semiconductor substrate". United States. https://www.osti.gov/servlets/purl/865997.
@article{osti_865997,
title = {Process for selectively patterning epitaxial film growth on a semiconductor substrate},
author = {Sheldon, Peter and Hayes, Russell E},
abstractNote = {A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1986},
month = {Wed Jan 01 00:00:00 EST 1986}
}