Selective area growth of semiconductors using patterned sol-gel materials
Patent
·
OSTI ID:1568186
Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-08GO28308
- Assignee:
- Alliance for Sustainable Energy, LLC (Golden, CO)
- Patent Number(s):
- 10,256,093
- Application Number:
- 15/362,420
- OSTI ID:
- 1568186
- Resource Relation:
- Patent File Date: 11/28/2016
- Country of Publication:
- United States
- Language:
- English
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