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Title: Selective area growth of semiconductors using patterned sol-gel materials

Patent ·
OSTI ID:1568186

Systems and methods for growing semiconductor materials on substrates by using patterned sol-gel materials are provided. According to a first aspect of the invention, a method includes forming a pattern of a sol-gel material on a first region of substrate, and depositing a semiconductor material on a second region of the substrate by selective area growth. The second region is adjacent to the first region.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC36-08GO28308
Assignee:
Alliance for Sustainable Energy, LLC (Golden, CO)
Patent Number(s):
10,256,093
Application Number:
15/362,420
OSTI ID:
1568186
Resource Relation:
Patent File Date: 11/28/2016
Country of Publication:
United States
Language:
English

References (7)

Methods for removing nuclei formed during epitaxial growth patent June 2016
Semiconductive Micro- and Nano-Wire Array Manufacturing patent-application February 2014
Hetero-epitaxial growth of non-lattice matched semiconductors patent October 1994
Semiconductive micro- and nano-wire array manufacturing patent June 2015
Selective OMCVD growth of compound semiconductor materials on silicon substrates patent May 1989
Isoplanar isolated active regions patent August 1996
Solution growth of lattice mismatched and solubility mismatched heterostructures patent October 1989