Title: Compositions of doped, co-doped and tri-doped semiconductor materials

Abstract

Semiconductor materials suitable for being used in radiation detectors are disclosed. A particular example of the semiconductor materials includes tellurium, cadmium, and zinc. Tellurium is in molar excess of cadmium and zinc. The example also includes aluminum having a concentration of about 10 to about 20,000 atomic parts per billion and erbium having a concentration of at least 10,000 atomic parts per billion.

Inventors:

Lynn, Kelvin ^[1]; Jones, Kelly ^[2]; Ciampi, Guido ^[3]

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1. Pullman, WA
2. Colfax, WA
3. Watertown, MA

Issue Date:

Tue Dec 06 00:00:00 EST 2011

Research Org.:

Washington State University Research Foundation (Pullman, WA)

Sponsoring Org.:

USDOE

OSTI Identifier:

1034347

Patent Number(s):

8070987

Application Number:

11/910,504

Assignee:

Washington State University Research Foundation (Pullman, WA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/0296 - including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
H01L31/02966 - {including ternary compounds, e.g. HgCdTe}
H01L31/1832 - {comprising ternary compounds, e.g. Hg Cd Te}

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DOE Contract Number:  

FG07-06ID14724

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

36 MATERIALS SCIENCE