Collisional energy deposition threshold for extended damage depths in ion-implanted silicates
- Sandia National Labs., Albuquerque, NM (United States)
- Consorzio INFM, Dipartimento di Chimica Fisica, Universita di Venezia, (Italy)
- Centro Ricerche Montedipe, Porto Marghera (Italy)
- Consorzio INFM, Dipartimento di Fisica, Universita di Padova, (Italy)
- Consorzio INFM, Dipartiment
Many properties of implanted fused silica (e.g., surface stress, hardness) exhibit maximum implantation-induced changes for collisional energy deposition values of {approximately}10{sup 20} keV/cm{sup 3}. We have observed a second critical energy deposition threshold value of about 10{sup 22} keV/cm{sup 3} in stress and hardness measurements as well as in many other experiments on silicate glasses (leaching, alkali depletion, etching rate, gaseous implant redistribution). The latter show evidence for damage depths exceeding TRIM ranges by about a factor of 2. For crystalline quartz, a similar threshold value has been found for extended damage depths (greater than TRIM) for 250 kev ions (H-Au) as measured by RBS and interference fringes. This phenomenon at high damage deposition energy may involve the large stress gradients between damaged and undamaged regions and the much increased diffusion coefficient for defect transport. 13 refs., 6 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6009121
- Report Number(s):
- SAND-91-1635C; CONF-911202-4; ON: DE92004737
- Resource Relation:
- Conference: Annual fall meeting of the Materials Research Society, Boston, MA (United States), 2-6 Dec 1991
- Country of Publication:
- United States
- Language:
- English
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