Ion implantation effects in crystalline quartz
Cantilever beam measurements of the stress induced in crystalline quartz by implantation of 150 keV and/or 250 keV He have shown that the data scale with energy into collisional processes. The damage state induced by the Ar implants does not lend itself to efficient utilization of the electronic component of subsequent He implantation in producing further disorder. The damage depth has been measured (optically) for a number of ions (1 {times} 10{sup 16} 250 keV/cm{sup 2}) and has been found to vary (relative to TRIM values) from about 0.63R{sub p} for He to about 1.84R{sub p} for Xe. RBS measurements of range for Ar to Au give values in fair agreement with the optical values. The ratio of the measured (optical) ranges to the predicted (TRIM) ranges, when plotted as a function of collisional energy deposition, indicates that extended damage (beyond ion range) occurs for deposition energies >{approximately}1 {times} 10{sup 22} keV/cm{sup 3}. The damage persists even after 900{degrees}C anneals. The effects of ion-induced stress may be an important factor in the establishment of the extended damage state. 14 refs., 7 figs., 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5469152
- Report Number(s):
- SAND-91-0863C; CONF-910646-3; ON: DE91016192
- Resource Relation:
- Conference: 6. conference on radiation effects in insulators, Weimar (Germany), 24-28 Jun 1991
- Country of Publication:
- United States
- Language:
- English
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