Defect reactions on the phosphorus sublattice in low-temperature electron-irradiated InP

Journal Article · Mon Apr 15 00:00:00 EST 1985 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.31.5551· OSTI ID:5782880

Sibille, A; Suski, J

This Rapid Communication describes several thermally or electronically stimulated defect reactions involving the dominant deep centers in low-temperature (25--300 K) electron-irradiated InP. Some of these reactions result in an increased concentration of the centers, thereby revealing the existence of a secondary production mechanism of the related defects. Low-energy irradiations allows one to select the type of the ejected atom (P) and gives direct evidence that only a phosphorus species, interstitial or vacancy, is involved in the creation-reaction-annealing events.

• Research Organization: Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 92220 Bagneux, France
• OSTI ID: 5782880
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 31:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
CRYSTAL DEFECTS
ELECTRONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
MEV RANGE 01-10
VERY LOW TEMPERATURE
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
INDIUM COMPOUNDS
LEPTONS
MEV RANGE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION EFFECTS
360605* - Materials- Radiation Effects