Annealing study of the electron-irradiation-induced defects H sub 4 and E sub 11 in InP: Defect transformation ( H sub 4 - E sub 11 ) r arrow H sub 4 sup prime

Journal Article · Mon Jan 15 00:00:00 EST 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.1028· OSTI ID:7004343

Bretagnon, T; Bastide, G; Rouzeyre, M ^[1]

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1. Groupe d'Etude des Semiconducteurs, Universite Sciences et Techniques Languedoc, place E. Bataillon, 34060 Montpellier CEDEX, France (FR)

Capacitance spectroscopy has been used to study the two dominant deep levels, {ital H}{sub 4} and {ital E}{sub 11}, produced in InP by low-energy electron irradiation. The annealing rates of {ital H}{sub 4} and {ital E}{sub 11} in the {ital p}-type material are found to be identical, as is also the dependence on free-carrier recombination and on the chemical nature of the acceptor (Cd or Zn). Recombination-enhanced annealing converts these traps to a hole trap {ital H}{sub 4}{sup {prime}}, which is not detectable by conventional deep-level transient spectroscopy. Its emission and capture properties are measured and analyzed. The similarity of the creation and annealing behavior of {ital H}{sub 4} and {ital E}{sub 11} shows that they share a common point defect. Our results lead to the tentative identification of the defect as a phosphorous vacancy-acceptor complex and we show how this may anneal to the {ital H}{sub 4}{sup {prime}} center.

• OSTI ID: 7004343
• Journal Information: Physical Review, B: Condensed Matter; (USA), Vol. 41:2; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
ANNEALING
CHARGE CARRIERS
E CENTERS
ELECTRONIC STRUCTURE
H CENTERS
RECOMBINATION
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
HEAT TREATMENTS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
VACANCIES
360605* - Materials- Radiation Effects