Deep level transient spectroscopy study of proton irradiated p -type InP

Journal Article · Wed May 01 00:00:00 EDT 1991 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.348856· OSTI ID:5615932

Walters, R J ^[1]; Summers, G P ^[2]

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1. SFA Inc., Landover, Maryland 20785 (USA)
2. Naval Research Laboratory, Washington, DC 20375 (USA) Department of Physics, University of Maryland, Baltimore County, Baltimore, Maryland 21228 (USA)

A deep level transient spectroscopy study of proton irradiation induced defects in {ital n}{sup +}{ital p} InP mesa diodes grown by metalorganic chemical vapor deposition is reported. In contrast to results reported for InP grown by other methods, 3 MeV proton irradiation produced a DLTS spectrum similar to 1 MeV electron irradiation with the addition of two new peaks. Six majority carrier peaks: {ital HP}1({ital E}{sub {ital a}}=0.15 eV), {ital H}2({ital E}{sub {ital a}}=0.20 eV), {ital H}3({ital E}{sub {ital a}}=0.30 eV), {ital H}4({ital E}{sub {ital a}}=0.37 eV), {ital H}5({ital E}{sub {ital a}}=0.54 eV), and {ital H}7({ital E}{sub {ital a}}=0.61 eV) and three minority carrier peaks: {ital EA}({ital E}{sub {ital a}}=0.26 eV), {ital EB}({ital E}{sub {ital a}}=0.74 eV), and {ital EC}({ital E}{sub {ital a}}=0.16 eV) were detected. The {ital H}5 peak displayed a thermally activated capture cross section and a dependence of peak height on injection level. Isothermal annealing at 375 K was performed and thermal annealing rates are presented. Low temperature (200 K), minority carrier injection annealing rates are also presented. For most of the defects, a significant residual concentration remained after injection which could not be annealed further. An equation was developed for the annealing rate of the major defect, {ital H}4, as a function of injection level, carrier concentration, and temperature.

• OSTI ID: 5615932
• Journal Information: Journal of Applied Physics; (USA), Vol. 69:9; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
PHYSICAL RADIATION EFFECTS
ANNEALING
CHEMICAL VAPOR DEPOSITION
DEEP LEVEL TRANSIENT SPECTROSCOPY
MEDIUM TEMPERATURE
MEV RANGE 01-10
P-N JUNCTIONS
P-TYPE CONDUCTORS
PROTONS
BARYONS
CHEMICAL COATING
DEPOSITION
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
HADRONS
HEAT TREATMENTS
INDIUM COMPOUNDS
JUNCTIONS
MATERIALS
MEV RANGE
NUCLEONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACE COATING
360605* - Materials- Radiation Effects