Origin of the main deep electron trap in electron irradiated InP

Journal Article · Mon Mar 03 00:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96477· OSTI ID:5955849

Sibille, A

The electrical activity and annealing behavior of the main electron trap in electron irradiated InP p/sup +/n junctions has been investigated. A very marked depth dependence of the annealing rate has been found. Moreover, this center apparently acts as if it were a deep donor, leading to an increase of carrier concentration on the n side. All these results are coherently interpreted with a model in terms of radiation defect D(P) (phosphorus interstitial or vacancy), residual shallow acceptor complexing, the final annealing resulting from a dissociation of the complex followed by a diffusion and either recapture or annihilation of D(P).

• Research Organization: Centre National d'Etudes des Telecommunications, Laboratoire de Bagneux, 196 rue de Paris, 92220 Bagneux, France
• OSTI ID: 5955849
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 48:9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM PHOSPHIDES
ANNEALING
PHYSICAL RADIATION EFFECTS
CARRIER DENSITY
DIFFUSION
ELECTRON COLLISIONS
ELECTRONS
INTERSTITIALS
P-N JUNCTIONS
TRAPS
VACANCIES
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTARY PARTICLES
FERMIONS
HEAT TREATMENTS
INDIUM COMPOUNDS
JUNCTIONS
LEPTONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POINT DEFECTS
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
360605* - Materials- Radiation Effects