In/sub 0/ /sub 2/Ga/sub 0/ /sub 8/As/GaAs, modulation-doped, strained-layer superlattice field-effect transistor

Conference · Sat Jan 01 00:00:00 EST 1983

OSTI ID:5653908

Zipperian, T E; Dawson, L R; Osbourn, G C; Fritz, I J

For the first time, field-effect transistor action has been demonstrated in InGaAs/GaAs strained-layer superlattice (SLS) material. The samples, prepared by MBE, utilized 17 periods (repeat distance, 300A) of alternating, modulation-doped, In/sub 0/ /sub 2/Ga/sub 0/ /sub 8/As and GaAs layers to form the channel of the device. Gate control was realized by use of an Al Schottky diode on the top and a p-n junction diode, formed between the superlattice and a p-type In/sub 0/ /sub 1/Ga/sub 0/ /sub 9/As buffer layer, on the bottom. At room temperature a representative transistor with a 2.5 ..mu..m gate length displayed a characteristic drain saturation current, I/sub DSS/, of 64 mA (V/sub DS/ = 4V, V/sub GS/ = OV), a double-gate pinchoff voltage, Vp, of 3.1V(V/sub DS/ = 4V, I/sub D/ = 5% of I/sub DSS/) and a maximum, double-gate, normalized, extrinsic transconductance, g/sub mo/, of 84mS/mm (V/sub DS/ = 4V). At 77K, I/sub DSS/ increased to 98mA, Vp remained approximately constant at 3.2V, and g/sub mo/ increased to 140mS/mm.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5653908
• Report Number(s): SAND-83-1657C; CONF-831243-1; ON: DE84000136
• Resource Relation: Conference: International electron device meeting, Washington, DC, USA, 5 Dec 1983
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
FIELD EFFECT TRANSISTORS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
INDIUM ARSENIDES
DOPED MATERIALS
LOW TEMPERATURE
SUPERLATTICES
ARSENIC COMPOUNDS
ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
420800* - Engineering- Electronic Circuits & Devices- (-1989)
360603 - Materials- Properties