Lattice-mismatched In sub 0. 53 Ga sub 0. 47 As/In sub 0. 52 Al sub 0. 48 As modulation-doped field-effect transistors on GaAs: Molecular-beam epitaxial growth and device performance

Journal Article · Sun Apr 01 00:00:00 EST 1990 · Journal of Applied Physics; (USA)

DOI:https://doi.org/10.1063/1.345368· OSTI ID:6975968

Chang, K; Bhattacharya, P; Lai, R ^[1]

---

1. Center of High-Frequency Microelectronics Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109-2122 (USA)

We describe here the properties of In{sub 0.53}Ga{sub 0.47}As/In{sub 0.52}Al{sub 0.48}As modulation-doped heterostructures and field-effect transistors grown directly by molecular-beam epitaxy on GaAs substrates. The generation and nature of dislocations in the films have been studied by transmission-electron microscopy. The final heterostructure contains a series of compositional steps of In{sub {ital x}}Ga{sub 1{minus}{ital x}}As (0{le}{ital x}{le}0.53) to generate and control the dislocation movement. The modulation-doped heterostructures are characterized by {mu}{sub 300 K}=8 150 cm{sup 2}/V s ({ital n}{sub {ital s}}=2.7{times}10{sup 12} cm{sup {minus}2}) and {mu}{sub 20 K}=26 100 cm{sup 2}/V s ({ital n}{sub {ital s}}=2.1{times}10{sup 12} cm{sup {minus}2}) which compare very favorably with values measured in similar lattice-matched heterostructures on InP. 1.4-{mu}m gate-modulation-doped field-effect transistors exhibit {ital g}{sub {ital m}}(ext)=240 mS/mm and {ital f}{sub {ital T}}=21 GHz. The drain current variation with gate bias is linear and the transconductance is uniform over a sizeable voltage range. These material and device characteristics indicate that In{sub {ital x}}Ga{sub 1{minus}{ital x}}As/In{sub {ital x}}Al{sub 1{minus}{ital x}}As transistors (with {ital x} varying over a certain range to vary {Delta}{ital E}{sub {ital c}}) can be designed on GaAs or even other mismatched substrates.

• DOE Contract Number: FG02-86ER45250
• OSTI ID: 6975968
• Journal Information: Journal of Applied Physics; (USA), Vol. 67:7; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
ELECTRICAL PROPERTIES
MOLECULAR BEAM EPITAXY
FIELD EFFECT TRANSISTORS
MODULATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
DISLOCATIONS
DOPED MATERIALS
HETEROJUNCTIONS
TRANSMISSION ELECTRON MICROSCOPY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MATERIALS
MICROSCOPY
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
TRANSISTORS
360603* - Materials- Properties