Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing
- National Isotope Centre, GNS Science, P.O. Box 31-312, Lower Hutt (New Zealand)
The authors demonstrate the fabrication of SiC nanocrystals on silicon by carbon ion implantation into silicon followed by electron beam annealing at 1000 deg. C. A continuous asymmetric, pyramidal ridge around 20 nm in height is observed at the boundary between the implanted and unimplanted regions. Adjacent to the ridge within the implanted region appears a trough which is continuous around the perimeter of the implanted/unimplanted boundary. The surface of the unimplanted region consists of pyramidal structures with an average height of 5-10 nm which cover the entire surface.
- OSTI ID:
- 20860998
- Journal Information:
- Applied Physics Letters, Vol. 89, Issue 15; Other Information: DOI: 10.1063/1.2361162; (c) 2006 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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