Reduction of traps and improvement of carrier lifetime in 4H-SiC epilayers by ion implantation
- Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan)
The authors report a significant reduction in deep level defects and improvement of carrier lifetime in 4H-SiC material after carrying out carbon or silicon ion implantation into the shallow surface layer of 250 nm and subsequent annealing at 1600 deg. C or higher temperature. Reduction of Z{sub 1/2} and EH{sub 6/7} traps from 3x10{sup 13} cm{sup -3} to below the detection limit (5x10{sup 11} cm{sup -3}) was observed by deep level transient spectroscopy in the material 4 {mu}m underneath the implanted layer. Minority carrier lifetime almost doubled in the implanted samples compared to the unimplanted samples. The authors propose that the implanted layer acts as a source of carbon interstitials which indiffuse during annealing and accelerate annealing out of grown-in defects in the layer underneath the implanted region.
- OSTI ID:
- 20971814
- Journal Information:
- Applied Physics Letters, Vol. 90, Issue 6; Other Information: DOI: 10.1063/1.2472530; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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