Ultrahigh-temperature microwave annealing of Al{sup +}- and P{sup +}-implanted 4H-SiC
- Department of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia 22030 (United States)
In this work, an ultrafast solid-state microwave annealing has been performed, in the temperature range of 1700-2120 degree sign C on Al{sup +}- and P{sup +}-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of {approx}600 degree sign C/s. The samples were annealed for 5-60 s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4 nm for 5x5 {mu}m{sup 2} scans even for microwave annealing at 2050 degree sign C for 30 s. Auger sputter profiling revealed a <7 nm thick surface layer composed primarily of silicon, oxygen, and nitrogen for the samples annealed in N{sub 2}, at annealing temperatures up to 2100 degree sign C. X-ray photoelectron spectroscopy revealed that this surface layer is mainly composed of silicon oxide and silicon nitride. Secondary ion mass spectrometry depth profiling confirmed almost no dopant in diffusion after microwave annealing at 2100 degree sign C for 15 s. However, a sublimation of {approx}100 nm of the surface SiC layer was observed for 15 s annealing at 2100 degree sign C. Rutherford backscattering spectra revealed a lattice damage-free SiC material after microwave annealing at 2050 degree sign C for 15 s, with scattering yields near the virgin SiC material. Van der Pauw-Hall measurements have revealed sheet resistance values as low as 2.4 k{omega}/{open_square} for Al{sup +}-implanted material annealed at 2100 degree sign C for 15 s and 14 {omega}/{open_square} for the P{sup +}-implanted material annealed at 1950 degree sign C for 30 s. The highest electron and hole mobilities measured in this work were 100 and 6.8 cm{sup 2}/V s, respectively, for the P{sup +}- and Al{sup +}-implanted materials.
- OSTI ID:
- 20982800
- Journal Information:
- Journal of Applied Physics, Vol. 101, Issue 7; Other Information: DOI: 10.1063/1.2717016; (c) 2007 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM IONS
ANNEALING
ATOMIC FORCE MICROSCOPY
ELECTRON MOBILITY
HEATING RATE
HOLE MOBILITY
ION IMPLANTATION
MASS SPECTRA
MASS SPECTROSCOPY
MICROWAVE RADIATION
NITROGEN
OXYGEN
PHOSPHORUS IONS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SILICON
SILICON NITRIDES
SILICON OXIDES
SUBLIMATION
TEMPERATURE RANGE 1000-4000 K
X-RAY PHOTOELECTRON SPECTROSCOPY