Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs

Journal Article · Sat Mar 15 00:00:00 EST 2003 · Materials Characterization

DOI:https://doi.org/10.1016/S1044-5803(03)00082-2· OSTI ID:20748690

Diniz, J A; Doi, I; Swart, J W

Silicon oxynitride (SiO{sub x}N{sub y}) and nitride (SiN{sub x}) insulators have been deposited or grown (with or without silane in the gas mixture, respectively) by electron cyclotron resonance (ECR) plasmas on Si and/or GaAs substrates at room temperature (20 deg. C) and low pressures (up to 10 mTorr). Chemical bonding characteristics of the SiO{sub x}N{sub y} and SiN{sub x} films were evaluated using Fourier transform infrared spectrometry (FTIR). The profile measurements determined the film thickness, the deposition (or oxidation) rate and the etch rates in buffered HF (BHF). The refractive indexes and the thicknesses were determined by ellipsometry. The effective interface charge densities were determined by capacitance-voltage (C-V) measurements. With these processes and analyses, different films were obtained and optimized. Suitable gate insulators for metal-insulator-semiconductor (MIS) devices with low interface charge densities were developed: (a) SiN{sub x} films deposited by ECR-chemical vapor deposition (ECR-PECVD) on GaAs substrates; (b) SiO{sub x}N{sub y} insulators obtained by low-energy molecular nitrogen ion ({sup 28}N{sub 2}{sup +}) implantation (energy of 5 keV and dose of 1x10{sup 15}/cm{sup 2}) in Si substrates prior to high-density O{sub 2} ECR plasma oxidation; and (c) SiO{sub x}N{sub y} insulators grown (without silane in the gas mixture) by O{sub 2}/N{sub 2}/Ar ECR plasma 'oxynitridation'. Furthermore, some SiN{sub x} films also present very good masking characteristics for local oxidation of silicon process.

• OSTI ID: 20748690
• Journal Information: Materials Characterization, Vol. 50, Issue 2-3; Conference: Brazilian Materials Research Society symposia on current trends in nanostructured materials, semiconductor Materials, thin films, and biomaterials, Rio de Janeiro (Brazil), 7-10 Jul 2002; Other Information: DOI: 10.1016/S1044-5803(03)00082-2; PII: S1044580303000822; Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved; Country of input: International Atomic Energy Agency (IAEA); ISSN 1044-5803
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BONDING
CAPACITANCE
CHARGE DENSITY
CHEMICAL VAPOR DEPOSITION
ELECTRON CYCLOTRON-RESONANCE
FILMS
FOURIER TRANSFORMATION
GALLIUM ARSENIDES
INFRARED SPECTRA
MIXTURES
NITROGEN IONS
OXIDATION
PLASMA
REFRACTIVE INDEX
SEMICONDUCTOR MATERIALS
SILANES
SILICON
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THICKNESS