Advanced dielectrics for passivation of InSb
A combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiO{sub x}N{sub y} on InSb at temperatures from 30{degrees}C to 250{degrees}C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (CV) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si{sub 3}ON{sub 2} on InSb, and sulfided layers capped with S{sub 3}ON{sub 2} all exhibited good C-V properties consistent with interface state densities on the order of 10{sup 11}/cm{sup 2}-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si{sub 3}N{sub 4} on InSb and the adhesion of Si{sub 3}ON{sub 2} on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10120606
- Report Number(s):
- SAND-92-1593C; CONF-921101-47; ON: DE93005353
- Resource Relation:
- Conference: 16. Materials Research Society (MRS) fall meeting,Boston, MA (United States),30 Nov - 5 Dec 1992; Other Information: PBD: [1992]
- Country of Publication:
- United States
- Language:
- English
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