Advanced dielectrics for passivation of InSb
A combination of Electron Cyclotron Resonance (ECR) plasma, electrochemical, and chemical growth process were examined to synthesize dielectric surface passivation layers on InSb. The material properties of ECR-grown SiO[sub x]N[sub y] on InSb at temperatures from 30[degrees]C to 250[degrees]C were investigated. Composition analysis was done using Rutherford backscattering spectrometry (RBS) and elastic recoil detection (ERD). The electrical quality of the passivation layer was characterized with capacitance-voltage (CV) measurements on metal-insulator-semiconductor structures over the frequency range from 1 kHz to 1 MHz. Sulfided layers, Si[sub 3]ON[sub 2] on InSb, and sulfided layers capped with S[sub 3]ON[sub 2] all exhibited good C-V properties consistent with interface state densities on the order of 10[sup 11]/cm[sup 2]-eV, and flatband voltages of magnitude less than 1 V. The difference in adhesion of Si[sub 3]N[sub 4] on InSb and the adhesion of Si[sub 3]ON[sub 2] on InSb was described in terms of the strength of the bonding at the dielectric-InSb interface. This work is the first to demonstrate passivation of an InSb surface with high-quality ECR silicon oxynitrides grown at room temperature.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 7076482
- Report Number(s):
- SAND-92-1593C; CONF-921101-47; ON: DE93005353
- Resource Relation:
- Conference: 16. Material Research Society international symposium on the scientific basis for nuclear waste management fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
INDIUM ANTIMONIDES
PASSIVATION
CRYSTAL GROWTH
DIELECTRIC MATERIALS
ELECTRON CYCLOTRON-RESONANCE
SILICON OXIDES
ANTIMONIDES
ANTIMONY COMPOUNDS
CHALCOGENIDES
CYCLOTRON RESONANCE
INDIUM COMPOUNDS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
RESONANCE
SILICON COMPOUNDS
360604* - Materials- Corrosion
Erosion
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360601 - Other Materials- Preparation & Manufacture