Fully Depleted Charge-Coupled Devices
Conference
·
OSTI ID:919255
We have developed fully depleted, back-illuminated CCDs thatbuild upon earlier research and development efforts directed towardstechnology development of silicon-strip detectors used inhigh-energy-physics experiments. The CCDs are fabricated on the same typeof high-resistivity, float-zone-refined silicon that is used for stripdetectors. The use of high-resistivity substrates allows for thickdepletion regions, on the order of 200-300 um, with corresponding highdetection efficiency for near-infrared andsoft x-ray photons. We comparethe fully depleted CCD to thep-i-n diode upon which it is based, anddescribe the use of fully depleted CCDs in astronomical and x-ray imagingapplications.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. High EnergyPhysics
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 919255
- Report Number(s):
- LBNL-61468; R&D Project: PS5MSL; BnR: KA1503020; TRN: US0806333
- Resource Relation:
- Conference: International Symposium on Detector Developmentfor Particle, Astrophysics, and Synchrotron Radiation Experiments(SNIC06), Stanford Linear Accelerator Center, April 3-6,2006
- Country of Publication:
- United States
- Language:
- English
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