Evolution of deep centers in GaN grown by hydride vapor phaseepitaxy
Deep centers and dislocation densities in undoped n GaN, grown by hydride vapor phase epitaxy (HVPE), were characterized as a function of the layer thickness by deep level transient spectroscopy and transmission electron microscopy, respectively. As the layer thickness decreases, the variety and concentration of deep centers increase, in conjunction with the increase of dislocation density. Based on comparison with electron irradiation induced centers, some dominant centers in HVPE GaN are identified as possible point defects.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science; US Air Force ContractF33615-95-C-1619, Air Force Office of Scientific ResearchAFOSR-ISSA-00-0011 and N0001499-1-1067, Office of Naval Research underAir Force Contract F19628-00-C-0002
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 860729
- Report Number(s):
- LBNL-47764; APPLAB; R&D Project: 43BA01; TRN: US200524%%296
- Journal Information:
- Applied Physics Letters, Vol. 78, Issue 3; Related Information: Journal Publication Date: 01/15/2001; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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