Calculations of carrier localization in In/sub x/Ga/sub 1-x/N
Journal Article
·
· Physical Review B
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Advanced Scientific Computing Research. Mathematical, Information, and Computational Sciences Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 787117
- Report Number(s):
- LBNL-47691; R&D Project: 618310; TRN: AH200134%%50
- Journal Information:
- Physical Review B, Vol. 63, Issue 24; Other Information: Journal Publication Date: June 2001; PBD: 4 Apr 2001
- Country of Publication:
- United States
- Language:
- English
Similar Records
Large, nitrogen-induced increase of the electron effective mass in In{sub y}Ga{sub 1-y}N{sub x}As{sub 1-x}
Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}
Dependence of the fundamental band gap of Al{sub x}Ga{sub 1-x}N on alloy composition and pressure
Journal Article
·
Thu Dec 02 00:00:00 EST 1999
· Applied Physics Letters
·
OSTI ID:787117
+9 more
Calculation of the ground state of shallow donors in GaAs{sub 1-x}N{sub x}
Journal Article
·
Mon May 15 00:00:00 EDT 2000
· Applied Physics Letters
·
OSTI ID:787117
Dependence of the fundamental band gap of Al{sub x}Ga{sub 1-x}N on alloy composition and pressure
Journal Article
·
Wed Dec 16 00:00:00 EST 1998
· Journal of Applied Physics
·
OSTI ID:787117
+5 more