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Title: Emission color-tuned light-emitting diode microarrays of nonpolar InxGa1–xN/GaN multishell nanotube heterostructures

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep18020· OSTI ID:1352381
 [1];  [2];  [3];  [4];  [1];  [5];  [4]
  1. Sejong Univ., Seoul (Korea, Republic of). Graphene Research Inst. and Hybrid Materials Research Center
  2. Korea Univ., Seoul (Korea). KU-KIST Graduate School of Converging Science and Technology
  3. Los Alamos National Lab. (LANL), Los Alamos, NM (United States). Center for Integrated Nanotechnologies
  4. Seoul National Univ. (Korea, Republic of). Dept. of Physics and Astronomy and Inst. of Applied Physics
  5. Seoul National Univ. (Korea, Republic of). Research Inst. of Advanced Materials (RIAM)

Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. We report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane InxGa1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. The emission wavelengths were controlled in the visible spectral range of green to violet by varying the indium mole fraction of the InxGa1–xN MQWs in the range 0.13 ≤ x ≤ 0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via the formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Lastly, the method of fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC52-06NA25396; AC04-94AL85000; NRF-2013R1A1A2058744; 20154030200630; NRF-2014M3A7B4051589
OSTI ID:
1352381
Alternate ID(s):
OSTI ID: 1259299
Report Number(s):
LA-UR-17-21824
Journal Information:
Scientific Reports, Vol. 5, Issue 1; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 16 works
Citation information provided by
Web of Science

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Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes journal June 2016
Effect of AlGaN undershell on the cathodoluminescence properties of coaxial GaInN/GaN multiple-quantum-shells nanowires journal January 2019
Effect of interface voids on electroluminescence colors for ZnO microdisk/ p -GaN heterojunction light-emitting diodes journal October 2017
A review on III–V core–multishell nanowires: growth, properties, and applications journal March 2017