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Title: Direct and real time probe of photoinduced structure transition in colossal magnetoresistive material

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4960100· OSTI ID:1336166
ORCiD logo [1];  [2];  [3];  [4];  [5];  [4]
  1. Florida State Univ., Tallahassee, FL (United States). Physics Dept.; National High Mangetic Field Lab., Tallahassee, FL (United States); Brookhaven National Lab. (BNL), Upton, NY (United States). Condensed Matter Physics and Materials Science Dept.
  2. Chinese Academy of Sciences (CAS), Beijing (China). Inst. of Physics
  3. National High Mangetic Field Lab., Tallahassee, FL (United States)
  4. Florida State Univ., Tallahassee, FL (United States). Physics Dept.; National High Mangetic Field Lab., Tallahassee, FL (United States)
  5. Univ. of Texas, Austin, TX (United States). Texas Materials Inst.

Here, we report a direct and real time measurement of photoinduced structure phase transition in single crystal La0.84Sr0.16MnO3 using femtosecond electron diffraction. The melting of orthorhombic lattice ordering under femtosecond optical excitation is found involving two distinct processes with different time scales, an initial fast melting of orthorhombic phase in about 4 ps and a subsequent slower transformation in 90 ps and longer timescales. Furthermore, the fast process is designated as the initial melting of orthorhombic phase induced by the Mn-O bond change that is most likely driven by the quenching of the dynamic Jahn-Teller distortion following the photo-excitation. We attribute the slow process to the growing of newly formed structure domain from the photo-excited sites to the neighboring non-excited orthorhombic sites.

Research Organization:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012704; 1207252
OSTI ID:
1336166
Report Number(s):
BNL-112734-2016-JA; APPLAB; R&D Project: MA015MACA; KC0201010
Journal Information:
Applied Physics Letters, Vol. 109, Issue 4; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

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