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Title: Leakage pathway layer for solar cell

Patent ·
OSTI ID:1227356

Leakage pathway layers for solar cells and methods of forming leakage pathway layers for solar cells are described.

Research Organization:
SunPower Corporation, San Jose, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17043
Assignee:
SunPower Corporation
Patent Number(s):
9,202,960
Application Number:
12/750,320
OSTI ID:
1227356
Resource Relation:
Patent File Date: 2010 Mar 30
Country of Publication:
United States
Language:
English

References (6)

Radiation resistant passivation of silicon solar cells patent July 1991
Preventing harmful polarization of solar cells patent June 2009
Solar cell having doped semiconductor heterojunction contacts patent June 2010
Current isolating epitaxial buffer layers for high voltage photodiode array patent-application June 2002
Solar Cell Having Doped Semiconductor Heterojunction Contacts patent-application November 2007
Method for the Contact Separation of Electrically-Conducting Layers on the Back Contacts of Solar Cells and Corresponding Solar Cells patent-application February 2008

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