Proximity-driven enhanced magnetic order at ferromagnetic-insulator-magnetic-topological-insulator interface
Journal Article
·
· Physical Review Letters
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States); Brookhaven National Lab., Upton, NY (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
- National Institute of Standards and Technology, Gaithersburg, MD (United States)
- Northeastern Univ., Boston, MA (United States)
- Boston College, Chestnut Hill, MA (United States)
Magnetic exchange driven proximity effect at a magnetic-insulator–topological-insulator (MI-TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. In this study, we report a dramatic enhancement of proximity exchange coupling in the MI/magnetic-TI EuS/Sb2–xVxTe3 hybrid heterostructure, where V doping is used to drive the TI (Sb2Te3) magnetic. We observe an artificial antiferromagneticlike structure near the MI-TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping in a hybrid heterostructure provides insights into the engineering of magnetic ordering.
- Research Organization:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- SC00112704
- OSTI ID:
- 1226076
- Report Number(s):
- BNL-108565-2015-JA; PRLTAO; R&D Project: MA015MACA; KC0201010
- Journal Information:
- Physical Review Letters, Vol. 115, Issue 8; ISSN 0031-9007
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
Cited by: 57 works
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