High-Temperature SiC Power Module with Integrated SiC Gate Drivers for Future High-Density Power Electronics Applications

Conference · Wed Jan 01 00:00:00 EST 2014

OSTI ID:1213317

Whitaker, Mr. Bret ^[1]; Cole, Mr. Zach ^[1]; Passmore, Mr. Brandon ^[1]; Martin, Daniel ^[1]; Mcnutt, Tyler ^[1]; Lostetter, Dr. Alex ^[1]; Ericson, Milton Nance ^[2]; Frank, Steven Shane ^[2]; Britton, Jr, Charles L ^[2]; Marlino, Laura D ^[2]; Mantooth, Alan ^[3]; Francis, Dr. Matt ^[3]; Lamichhane, Ranjan ^[3]; Shepherd, Dr. Paul ^[3]; Glover, Dr. Michael ^[3]

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1. APEI, Inc.
2. ORNL
3. University of Arkansas

This paper presents the testing results of an all-silicon carbide (SiC) intelligent power module (IPM) for use in future high-density power electronics applications. The IPM has high-temperature capability and contains both SiC power devices and SiC gate driver integrated circuits (ICs). The high-temperature capability of the SiC gate driver ICs allows for them to be packaged into the power module and be located physically close to the power devices. This provides a distinct advantage by reducing the gate driver loop inductance, which promotes high frequency operation, while also reducing the overall volume of the system through higher levels of integration. The power module was tested in a bridgeless-boost converter to showcase the performance of the module in a system level application. The converter was initially operated with a switching frequency of 200 kHz with a peak output power of approximately 5 kW. The efficiency of the converter was then evaluated experimentally and optimized by increasing the overdrive voltage on the SiC gate driver ICs. Overall a peak efficiency of 97.7% was measured at 3.0 kW output. The converter s switching frequency was then increased to 500 kHz to prove the high frequency capability of the power module was then pushed to its limits and operated at a switching frequency of 500 kHz. With no further optimization of components, the converter was able to operate under these conditions and showed a peak efficiency of 95.0% at an output power of 2.1 kW.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: Work for Others (WFO)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1213317
• Resource Relation: Conference: 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Knoxville, TN, USA, 20141013, 20141015
• Country of Publication: United States
• Language: English