Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals
The present invention provides a method of preparing aluminum-doped zinc oxide (AZO) nanocrystals. In an exemplary embodiment, the method includes (1) injecting a precursor mixture of a zinc precursor, an aluminum precursor, an amine, and a fatty acid in a solution of a vicinal diol in a non-coordinating solvent, thereby resulting in a reaction mixture, (2) precipitating the nanocrystals from the reaction mixture, thereby resulting in a final precipitate, and (3) dissolving the final precipitate in an apolar solvent. The present invention also provides a dispersion. In an exemplary embodiment, the dispersion includes (1) nanocrystals that are well separated from each other, where the nanocrystals are coated with surfactants and (2) an apolar solvent where the nanocrystals are suspended in the apolar solvent. The present invention also provides a film. In an exemplary embodiment, the film includes (1) a substrate and (2) nanocrystals that are evenly distributed on the substrate.
- Research Organization:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-05CH11231
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- 8,961,828
- Application Number:
- 13/989,306
- OSTI ID:
- 1171093
- Resource Relation:
- Patent File Date: 2011 Nov 23
- Country of Publication:
- United States
- Language:
- English
Similar Records
Methods for preparing colloidal nanocrystal-based thin films
In Situ Growth and Interlayer Modulation of Layered Double Hydroxide Thin Films from a Transparent Conducting Oxide Precursor