Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiOx and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstrates an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1146036
- Report Number(s):
- SAND-2008-0556J; JVTBD9; 519568; TRN: US1600495
- Journal Information:
- Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics, Vol. 33, Issue 4; ISSN 2166-2746
- Publisher:
- American Vacuum Society/AIPCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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