Mechanical behavior of twinned SiC nanowires under combined tension-torsion and compression-torsion strain

Journal Article · Thu Jul 01 00:00:00 EDT 2010 · Journal of Applied Physics, 108(1):Art. No. 013504

DOI:https://doi.org/10.1063/1.3456002· OSTI ID:988632

Li, Zhijie; Wang, Shengjie; Wang, Zhiguo; Zu, Xiaotao T; Gao, Fei; Weber, William J

The mechanical behavior of twinned silicon carbide (SiC) nanowires under combined tension-torsion and compression-torsion is investigated using molecular dynamics simulations with an empirical potential. The simulation results show that both the tensile failure stress and buckling stress decrease under combined tension-torsional and combined compression-torsional strain, and they decrease with increasing torsional rate under combined loading. The torsion rate has no effect on the elastic properties of the twinned SiC nanowires. The collapse of the twinned nanowires takes place in a twin stacking fault of the nanowires.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 988632
• Report Number(s): PNNL-SA-73196; JAPIAU; 8208; KC0201020; TRN: US201018%%590
• Journal Information: Journal of Applied Physics, 108(1):Art. No. 013504, Vol. 108, Issue 1; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BUCKLING
ELASTICITY
SILICON CARBIDES
SIMULATION
STACKING FAULTS
STRAINS
TORSION
Mechanical behavior
Nano wires
Twin boundary
SiC
Environmental Molecular Sciences Laboratory