From Nanoislands to Nanowires: Growtth of Germanium on Gallium-Terminated Silicon Surfaces
The influence of Ga pre-adsorption on Si(111), Si(113) and Si(112) surfaces on Ge growth has been investigated by low-energy electron diffraction and microscopy as well as X-ray photoemission spectroscopy. On Si(111), step edges and substrate domain boundaries are decorated with Ga at high deposition temperatures, enabling selective growth and alignment of three-dimensional Ge islands on a chemically modulated surface. On Si(113), a morphological modulation is achieved by Ga saturation, as the Si substrate decomposes into an ordered array of (112) and (115) facets. This results in the growth of Ge islands aligned at the facets. These islands exhibit an anisotropy, as they are elongated along [1{bar 1}0]. Ga pre-adsorption on Si(112) smoothens the initially faceted bare surface, and subsequent Ge growth leads to the formation of nanoscale Ge wires. The results are discussed in terms of surface chemistry, as well as diffusion and strain relaxation anisotropy.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). National Synchrotron Light Source
- Sponsoring Organization:
- Doe - Office Of Science
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 980216
- Report Number(s):
- BNL-93134-2010-JA; TRN: US201015%%1601
- Journal Information:
- Physica Status Solidi A, Vol. 206, Issue 8; ISSN 1862-6300
- Country of Publication:
- United States
- Language:
- English
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