Electron-beam induced recrystallization in amorphous apatite
Electron-beam-induced recrystallization of irradiation-induced amorphous Sr2Nd8(SiO4)6O2 is investigated in situ using transmission electron microscopy with 200 keV electrons at room temperature. Epitaxial recrystallization is observed from both the amorphous/crystalline interface and the surface, and the recrystallization is more pronounced with increasing electron-beam flux. Since the temperature increase induced by electron-beam irradiation is estimated to be less than 7 K and maximum energies transferred to target atoms are below the displacement energies, ionization-induced processes are considered to be the primary mechanisms for the solid-phase epitaxial recrystallization observed in the present study.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 898085
- Report Number(s):
- PNNL-SA-53041; 19841; KC0201020; TRN: US200705%%440
- Journal Information:
- Applied Physics Letters, 90(2):021912, 1-3, Journal Name: Applied Physics Letters, 90(2):021912, 1-3
- Country of Publication:
- United States
- Language:
- English
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