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Title: Semiconductor assisted metal deposition for nanolithography applications

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [2]
  1. (Naperville, IL)
  2. (Downers Grove, IL)
  3. (Belgrade, YU)
  4. (West Brooklyn, IL)
  5. (Elmhurst, IL)
Publication Date:
OSTI Identifier:
873915
Report Number(s):
US 6271130
DOE Contract Number:
W-31109-ENG-38
Resource Type:
Patent
Research Org:
Argonne National Laboratory (ANL), Argonne, IL
Country of Publication:
United States
Language:
English
Subject:
semiconductor; assisted; metal; deposition; nanolithography; applications; article; manufacture; method; forming; nanoparticle; sized; material; components; semiconductor; oxide; substrate; nanoparticles; semiconductor; oxide; modifier; deposited; nanoparticles; source; metal; deposited; association; semiconductor; modifier; modifier; enabling; electronic; scavenging; chelation; metal; metal; modifier; illuminated; reduction; metal; metal; semiconductor; nanoparticles; oxide substrate; particle size; metal deposition; semiconductor oxide; semiconductor oxide; metal deposit /438/257/