Semiconductor assisted metal deposition for nanolithography applications

Patent · Mon Jan 01 00:00:00 EST 2001

OSTI ID:873915

Rajh, Tijana ^[1]; Meshkov, Natalia ^[2]; Nedelijkovic, Jovan M ^[3]; Skubal, Laura R ^[4]; Tiede, David M ^[5]; Thurnauer, Marion ^[2]

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1. Naperville, IL
2. Downers Grove, IL
3. Belgrade, YU
4. West Brooklyn, IL
5. Elmhurst, IL

An article of manufacture and method of forming nanoparticle sized material components. A semiconductor oxide substrate includes nanoparticles of semiconductor oxide. A modifier is deposited onto the nanoparticles, and a source of metal ions are deposited in association with the semiconductor and the modifier, the modifier enabling electronic hole scavenging and chelation of the metal ions. The metal ions and modifier are illuminated to cause reduction of the metal ions to metal onto the semiconductor nanoparticles.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: University of Chicago (Chicago, IL)
• Patent Number(s): US 6271130
• OSTI ID: 873915
• Country of Publication: United States
• Language: English

Related Subjects

semiconductor
assisted
metal
deposition
nanolithography
applications
article
manufacture
method
forming
nanoparticle
sized
material
components
oxide
substrate
nanoparticles
modifier
deposited
source
association
enabling
electronic
scavenging
chelation
illuminated
reduction
oxide substrate
particle size
metal deposition
semiconductor oxide
metal deposit
/438/257/