Post-growth thermal treatment of the InAs/GaAs quantum dots

Conference · Wed Nov 22 00:00:00 EST 2000

OSTI ID:771942

Jasinski, J; Babinski, A; Bozek, R; Baranowski, J M

The effect of post-growth thermal treatment of the InAs/GaAs quantum dots is investigated in this work. The photoluminescence (PL) and transmission electron microscopy (TEM) studies of samples annealed at temperatures up to 950 degrees C are presented. A complete dissolution of QDs and substantial broadening of the wetting layer (WL) can be seen from TEM. We propose that the thermally induced modification of the WL rather than QDs can be responsible for a blue-shift and narrowing of PL peaks in structures containing InAs/GaAs QDs.

• Research Organization: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
• Sponsoring Organization: Polish Committee for Scientific Research/7 T08 A 040 17 (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 771942
• Report Number(s): LBNL-46982; R&D Project: 513340; TRN: AH200108%%85
• Resource Relation: Conference: The 11th International Semiconducting and Insulating Materials Conference (SIMC-XI 2000), Canberra (AU), 07/03/2000--07/07/2000; Other Information: PBD: 22 Nov 2000
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISSOLUTION
MODIFICATIONS
PHOTOLUMINESCENCE
TRANSMISSION ELECTRON MICROSCOPY
INDIUM ARSENIDES
GALLIUM ARSENIDES
HEAT TREATMENTS
INAS/GAAS QUANTUM DOTS WETTING LAYER ANNEALING INTERDIFFUSION