Comparison of fabrication approaches for selectively oxidized VCSEL arrays
The impressive performance improvements of laterally oxidized VCSELs come at the expense of increased fabrication complexity for 2-dimensional arrays. Since the epitaxial layers to be wet-thermally oxidized must be exposed, non-planarity can be an issue. This is particularly important in that electrical contact to both the anode and cathode of the diode must be brought out to a package. They have investigated four fabrication sequences suitable for the fabrication of 2-dimensional VCSEL arrays. These techniques include: mesa etched polymer planarized, mesa etched bridge contacted, mesa etched oxide isolated (where the electrical trace is isolated from the substrate during the oxidation) and oxide/implant isolation (oxidation through small via holes) all of which result in VCSELs with outstanding performance. The suitability of these processes for manufacturing are assessed relative to oxidation uniformity, device capacitance, and structural ruggedness for packaging.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 754343
- Report Number(s):
- SAND2000-0121C; 0000034282-000; 0000034282-000; TRN: AH200016%%232
- Resource Relation:
- Conference: National Conference of Standards Laboratories, Toronto, Ontario (CA), 07/16/2000--07/20/2000; Other Information: PBD: 18 Apr 2000
- Country of Publication:
- United States
- Language:
- English
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