skip to main content

Title: Method of etching zirconium diboride

The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.
Authors:
;
Publication Date:
OSTI Identifier:
7192671
Resource Type:
Patent
Resource Relation:
Other Information: This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of application available NTIS
Research Org:
Department of the Army, Washington, DC (USA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; DIFFUSION COATINGS; ZIRCONIUM BORIDES; ETCHING; GALLIUM ARSENIDES; SPUTTERING; ARSENIC COMPOUNDS; ARSENIDES; BORIDES; BORON COMPOUNDS; COATINGS; FILMS; GALLIUM COMPOUNDS; PNICTIDES; SURFACE FINISHING; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS 360201* -- Ceramics, Cermets, & Refractories-- Preparation & Fabrication