Method of etching zirconium diboride

Patent · Thu Mar 31 00:00:00 EST 1988

OSTI ID:7192671

Heath, L S; Kwiatkowski, B

The invention described herein may be manufactured, used, and licensed by or for the Government for governmental purposes without the payment to us of any royalty thereon. This invention relates in general to a method of etching, zirconium diboride(ZrB/sub 2/) and, in particular, to a method of dry etching a thin film of ZrB/sub 2/ that has been deposited onto a substrate and patterned using photolithography. U.S. patent application S.N. 156, 124, filed 16 February, 1988, of Linda S. Heath for Method of Etching Titanium Diboride and assigned to a common assignee and with which this application is copending describes and claims a method of etching titanium diboride with a dry etch. Zirconium diboride, like titanium diboride, TiB/sub 2/, has become of interest in laboratory research because of its resistance to change or degradation at high temperatures. By adjusting the process parameters, one is able to attain etch rates of 67 to 140 A/min for ZrB/sub 2/. This is useful for patterning ZrB/sub 2/ as a diffusion barrier or a Schottky contact to semiconductors. The ZrB/sub 2/ film may be on a GaAs substrate.

• Research Organization: Department of the Army, Washington, DC (USA)
• Assignee: Department of the Army, Washington, DC
• OSTI ID: 7192671
• Resource Relation: Other Information: This Government-owned invention available for U.S. licensing and, possibly, for foreign licensing. Copy of application available NTIS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
THIN FILMS
DIFFUSION COATINGS
ZIRCONIUM BORIDES
ETCHING
GALLIUM ARSENIDES
SPUTTERING
ARSENIC COMPOUNDS
ARSENIDES
BORIDES
BORON COMPOUNDS
COATINGS
FILMS
GALLIUM COMPOUNDS
PNICTIDES
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
ZIRCONIUM COMPOUNDS
360201* - Ceramics
Cermets
& Refractories- Preparation & Fabrication