Monolithic laser diode structure for microwave generation

Patent · Tue Mar 06 00:00:00 EST 1990

OSTI ID:6944185

Goldberg, L; Weller, J F

This patent describes an apparatus. It comprises: a semiconductor substrate; a semiconductor master laser and first and second semiconductor slave lasers fabricated adjacent to each other on the semiconductor substrate. The master laser generating an optical output at a frequency f{sub 0} and sidebands at multiples of {Delta}f, the first and second slave lasers being tuned to approximately coincide with first and second preselected sidebands of the master laser; and means for respectively injection-locking the first and second slave lasers to the first and second preselected sidebands.

• Assignee: Secretary of the Navy, Washington, DC
• Patent Number(s): US 4907234; A
• Application Number: PPN: US 7-347132A
• OSTI ID: 6944185
• Resource Relation: Patent File Date: 4 May 1989
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
MICROWAVE RADIATION
DESIGN
MODE LOCKING
OPTICS
SEMICONDUCTOR DIODES
ELECTROMAGNETIC RADIATION
LASERS
RADIATIONS
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
426002* - Engineering- Lasers & Masers- (1990-)