Simulation of high-efficiency n[sup +]p indium phosphide solar cell results and future improvements

Journal Article · Thu Dec 01 00:00:00 EST 1994 · IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/16.337476· OSTI ID:6676818

Jain, R K; Flood, D J ^[1]

---

1. NASA Lewis Research Center, Cleveland, OH (United States)

A simulation of the highest efficiency (19.1% AM0) n[sup +]p indium phosphide (InP) solar cell was made using a computer code PC-1D in order to understand it and suggest future improvements to it. Available cell design and process data was used in the simulation. Minority carrier diffusion lengths in the emitter and base have been varied to match the experimental cell I-V characteristics with the calculated results. To further understand and improve the InP cell efficiency, simulations were performed using improved values of cell material and process parameters. The authors show that the efficiency of this cell could be increased to more than 23% AM0 by incorporating the suggested cell material, design and process improvements. At these high efficiencies InP cell technology will be very attractive for space use.

• OSTI ID: 6676818
• Journal Information: IEEE Transactions on Electron Devices (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:12; ISSN 0018-9383
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
INDIUM PHOSPHIDE SOLAR CELLS
COMPUTERIZED SIMULATION
ELECTRIC CONDUCTIVITY
FABRICATION
P CODES
PERFORMANCE
SPACECRAFT POWER SUPPLIES
COMPUTER CODES
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
ELECTRONIC EQUIPMENT
EQUIPMENT
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
POWER SUPPLIES
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion