Orientation of graphitic planes during the bias-enhanced nucleation of diamond on silicon: An x-ray absorption near-edge study

Journal Article · Sun Nov 01 00:00:00 EST 1998 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.122627· OSTI ID:664652

Jimenez, I; Mar Garcia, M; Albella, J M ^[1]; Terminello, L J ^[2]

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1. Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain)
2. Lawrence Livermore National Laboratory, Livermore, California 94551 (United States)

The bias-enhanced nucleation of diamond on Si(100) is studied by angle-dependent x-ray absorption near-edge spectroscopy (XANES). During diamond nucleation, a graphitic phase is also detected. The angle dependence of the XANES signal shows that the graphitic basal planes are oriented perpendicular to the surface. Implications of this result on the mechanism of bias-enhanced nucleation are discussed.{copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 664652
• Journal Information: Applied Physics Letters, Vol. 73, Issue 20; Other Information: PBD: Nov 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
DIAMONDS
SILICON
NUCLEATION
X-RAY SPECTROSCOPY
ABSORPTION SPECTRA
ORIENTATION
ANGULAR DISTRIBUTION
THIN FILMS